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IRF7306

MOSFET 2P-CH 30V 3.6A 8-SOIC

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SeekIC No. : 004376707 Detail

IRF7306: MOSFET 2P-CH 30V 3.6A 8-SOIC

IRF7306 Data Sheet

floor Price/Ceiling Price

US $ .57~.57 / Piece | Get Latest Price
Part Number:
IRF7306
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~475
  • Unit Price
  • $.57
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

*Generation V Technology
* Ultra Low On-Resistance
* Dual P-Channel Mosfet
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching




Pinout

Connection Diagram




Specifications

Parameter Max. Units
ID@TA=25 10 Sec. Pulsed Drain Current, VGS @ 10V -4.0 A
ID@TA=25 Continuous Drain Current, VGS @ 10V -3.6
ID@TA=70 Continuous Drain Current, VGS @ 10V -2.9
IDM Pulsed Drain Current -14
PD @TA = 25 Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150





Description

Fifth Generation HEXFETs IRF7306 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 IRF7306 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.






Parameters:

Technical/Catalog InformationIRF7306
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C3.6A
Rds On (Max) @ Id, Vgs100 mOhm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max2W
PackagingBulk
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET Feature*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7306
IRF7306



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