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IRF7309

MOSFET N+P 30V 3A 8-SOIC

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SeekIC No. : 004376710 Detail

IRF7309: MOSFET N+P 30V 3A 8-SOIC

IRF7309 Data Sheet

floor Price/Ceiling Price

US $ .57~.57 / Piece | Get Latest Price
Part Number:
IRF7309
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~475
  • Unit Price
  • $.57
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Specifications

  Parameter N-Channel Max.P-Channel Units
ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 4.5V  4.7 -3.5 A
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V  4.0 -3.0 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 3.2 -2.4 A
IDM Pulsed Drain Current 16 -12 A
PD @TA = 25°C Maximum Power Dissipation 14 W
  Linear Derating Factor 0.011 mW/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 6.9 -6.0 V/ns
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C



Description

Fifth Generation HEXFETs IRF7309 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 IRF7309 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.




Parameters:

Technical/Catalog InformationIRF7309
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4A, 3A
Rds On (Max) @ Id, Vgs50 mOhm @ 2.4A, 10V
Input Capacitance (Ciss) @ Vds 440pF @ 15V
Power - Max1.4W
PackagingBulk
Gate Charge (Qg) @ Vgs25nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET Feature*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7309
IRF7309



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