Position: Home  > All Categories> Integrated Circuits (ICs) > IRF7311

IRF7311

Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ -10V 6.6 A ID @ TA = 100°C Continuous Drain Current, VGS @ -10V 5.3 A IDM Pulsed Drain Current 26 A PD @TA = 25°CTA = 70°C Maximum Power Dissipation 2.52.0 W Linear Derating Fac...

product image

IRF7311 Picture
See larger image
SeekIC No. : 004376716 Detail

IRF7311: Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ -10V 6.6 A ID @ TA = 100°C Continuous Drain Current, VGS @ -10V 5.3 A IDM Pulsed Drain Cur...

IRF7311 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF7311
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Specifications

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V 6.6 A
ID @ TA = 100°C Continuous Drain Current, VGS @ -10V 5.3 A
IDM Pulsed Drain Current 26 A
PD @TA = 25°C
TA = 70°C		 Maximum Power Dissipation 2.5
2.0		 W
Linear Derating Factor 1.3 mW/°C
VDS 20 20 V
VGS Gate-to-Source Voltage ± 12 V
EAS Single Pulse Avalanche Energy 100 mJ
IAR Avalanche Current 4.1
 A
EAR Repetitive Avalanche Energy 0.20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0
TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C





Description

Fifth Generation HEXFETs IRF7311 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 IRF7311 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Crystals and Oscillators
WT325BI0030.000000
2SB49
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Tools
TCP202
G084SN05 V.3
Tapes, Adhesives
803
AC452-2
Cable Assemblies
CS1W-CN114
XW2Z-500T
View more