IRF7328PBF

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Configuration : Dual
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : - 8 A
Resistance Drain-Source RDS (on) : 21 m Ohms


Features:

Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Available in Tape & Reel
Lead-Free


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	-30	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ -10V	-8.0
ID @ TA = 70°C	Continuous Drain Current, VGS @ -10V	-6.4
IDM	Pulsed Drain Current	-30
PD @TA = 25°C	Power Dissipation	2.0	W
PD @TA = 70°C	Power Dissipation	1.3	W
	Linear Derating Factor	16	mW/°C
VGS	Gate-to-Source Voltage	± 20	V
TSTG	Storage Temperature Range	-55 to + 150	°C

Description

New trench HEXFET^® Power MOSFETs IRF7328PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.

Parameters:

Technical/Catalog Information	IRF7328PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	21 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds	2675pF @ 25V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	78nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7328PBF IRF7328PBF