IRF7220

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 600mV @ 250µA
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Drain to Source Voltage (Vdss): 14V
Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V
Gate Charge (Qg) @ Vgs: 125nC @ 5V
Input Capacitance (Ciss) @ Vds: 8075pF @ 10V


Features:

*Ultra Low On-Resistance
* P-Channel MOSFET
* Surface Mount
* Available in Tape & Reel




Pinout






Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-14	V
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	±11	A
ID @ TC = 70	Continuous Drain Current, VGS @ 10V	±8.8
IDM	Pulsed Drain Current	±88
PD @TC = 25	Power Dissipation	2.5	W
PD @TC = 70	Power Dissipation	1.6
	Linear Derating Factor	0.02	W/
EAS	Single Pulse Avalanche Energy	110	mJ
VGS	Gate-to-Source Voltage	± 12	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

These P-Channel MOSFETs IRF7220 from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

The SO-8 IRF7220 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.