IRF7304

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 4.3A
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
Series: HEXFET®
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
Gate Charge (Qg) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 610pF @ 15V
Packaging: Tube


Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual P-Channel Mosfet
·Surface Mount
·Available in Tape & Reel
·Dynamic dv/dt Rating
·Fast Switching


Specifications

	Parameter	Max.	Unit
ID @ TA = 25°C	10 Sec. Pulsed Drain Current, VGS @ -4.5V	-4.0	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ -4.5V	-3.6	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ -4.5V	-2.9	A
IDM	Pulsed Drain Current	-14	A
PD @TA = 25°C	Power Dissipation (PCB Mount)**	1.4	W
	Linear Derating Factor (PCB Mount)**	0.011	W/°C
VGS	Gate-to-Source Voltage	±8.0	V
dv/dt	Peak Diode Recovery dv/dt	-1.2	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150	°C

Description

techniques to achieve the lowest possible on-resistance per silicon area IRF7304. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 IRF7304 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.