IRF7306QPBF

Resistance Drain-Source RDS (on) :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Configuration : Dual
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : - 3.6 A


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dual P Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· 150°C Operating Temperature
· Automotive [Q101] Qualified
· Lead-Free


Specifications

	Parameter	Max.	Unit
ID @ TA = 25	Continuous Drain Current, VGS @ -10V	-4.0	A
ID @ TA= 70	Continuous Drain Current, VGS @- 10V	-3.6	A
ID @ TA= 70	Continuous Drain Current, VGS @ -10V	-2.9	A
IDM	Pulsed Drain Current	-14	A
PD @TA = 25	Power Dissipation	2.0	W
	Linear Derating Factor	0.016	V
VDS	Drain-to-Source Voltage	±20	V
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 150

Description

Specifically designed for Automotive applications IRF7306QPbF, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package IRF7306QPbF provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Parameters:

Technical/Catalog Information	IRF7306QPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3.6A
Rds On (Max) @ Id, Vgs	100 mOhm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds	440pF @ 25V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7306QPBF IRF7306QPBF