IRF710B

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 22 A
Drain-Source Breakdown Voltage : 400 V
Resistance Drain-Source RDS (on) : 2.7 Ohms


Features:

• 2.0A, 400V, R_DS(on) = 3.4Ω @V_GS = 10 V
• Low gate charge ( typical 7.7 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	IRF710B	IRFS710B	Units
VDSS	Drain-Source Voltage	400		V
ID	Drain Current - Continuous (TC = 25)               - Continuous (TC = 100)	2.0	2.0 *	A
		1.3	1.3 *	A
IDM	Drain Current - Pulsed (Note 1)	6.0	6.0 *	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	100		mJ
IAR	Avalanche Current (Note 1)	2.0		A
EAR	Repetitive Avalanche Energy (Note 1)	3.6		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5		V/ns
PD	Power Dissipation (TC = 25)                   - Derate above 25	36	23	W
		0.29	0.19	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors IRF710B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology IRF710B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.