Features: · Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET· Surface Mount·Fully Avalanche RatedSpecifications Symbol MaximumN-Channel PChannel Units Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ± 12 ± 12 V Co...
IRF7317: Features: · Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET· Surface Mount·Fully Avalanche RatedSpecifications Symbol MaximumN-Channel PChannel Units Dr...
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Symbol |
Maximum N-Channel PChannel |
Units | |||
Drain-Source Voltage |
VDS |
20 |
-20 |
V | |
Gate-Source Voltage |
VGS |
± 12 |
± 12 |
V | |
Continuous Drain Current. | TA = 25°C |
ID |
6.6 |
-5.3 |
A |
TA = 70°C |
ID |
5.3 |
-4.3 |
A | |
Pulsed Drain Current |
IDM |
26 |
-21 |
A | |
Continuous Source Current (Diode Conduction) |
IS |
2.5 |
-2.5 |
A | |
Maximum Power Dissipation | TA = 25°C |
PD |
2.0 |
2.0 |
W |
TA = 70°C |
PD |
1.3 |
1.3 |
W | |
Single Pulse Avalanche Energy |
EAS |
100 |
150 |
mJ | |
Avalanche Current |
IAR |
4.1 |
-2.9 |
A | |
Repetitive Avalanche Energy |
EAR |
0.20 |
0.20 |
mJ | |
Peak Diode Recovery dv/dt |
dv/dt |
5.0 |
-5.0 |
V/ ns | |
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to + 150 |
°C |
Fifth Generation HEXFETs IRF7317 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7317 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.