IRF7317

Features: · Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET· Surface Mount·Fully Avalanche RatedSpecifications Symbol MaximumN-Channel PChannel Units Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ± 12 ± 12 V Co...

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IRF7317 Picture
SeekIC No. : 004376722 Detail

IRF7317: Features: · Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET· Surface Mount·Fully Avalanche RatedSpecifications Symbol MaximumN-Channel PChannel Units Dr...

floor Price/Ceiling Price

Part Number:
IRF7317
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Features:

· Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
· Surface Mount
·Fully Avalanche Rated





Specifications

Symbol
Maximum
N-Channel PChannel
Units
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
VGS
± 12
± 12
V
Continuous Drain Current. TA = 25°C
ID
6.6
-5.3
A
TA = 70°C
ID
5.3
-4.3
A
Pulsed Drain Current
IDM
26
-21
A
Continuous Source Current (Diode Conduction)
IS
2.5
-2.5
A
Maximum Power Dissipation TA = 25°C
PD
2.0
2.0
W
TA = 70°C
PD
1.3
1.3
W
Single Pulse Avalanche Energy
EAS
100
150
mJ
Avalanche Current
IAR
4.1
-2.9
A
Repetitive Avalanche Energy
EAR
0.20
0.20
mJ
Peak Diode Recovery dv/dt
dv/dt
5.0
-5.0
V/ ns
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
°C





Description

Fifth Generation HEXFETs IRF7317 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 IRF7317 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.






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