Position: Home  > All Categories> Integrated Circuits (ICs) > IRF7317

IRF7317

Features: · Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET· Surface Mount·Fully Avalanche RatedSpecifications Symbol MaximumN-Channel PChannel Units Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ± 12 ± 12 V Co...

product image

IRF7317 Picture
See larger image
SeekIC No. : 004376722 Detail

IRF7317: Features: · Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET· Surface Mount·Fully Avalanche RatedSpecifications Symbol MaximumN-Channel PChannel Units Dr...

IRF7317 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF7317
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/9/16

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
· Surface Mount
·Fully Avalanche Rated




Specifications

Symbol
Maximum
N-Channel PChannel
Units
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
VGS
± 12
± 12
V
Continuous Drain Current. TA = 25°C
ID
6.6
-5.3
A
TA = 70°C
ID
5.3
-4.3
A
Pulsed Drain Current
IDM
26
-21
A
Continuous Source Current (Diode Conduction)
IS
2.5
-2.5
A
Maximum Power Dissipation TA = 25°C
PD
2.0
2.0
W
TA = 70°C
PD
1.3
1.3
W
Single Pulse Avalanche Energy
EAS
100
150
mJ
Avalanche Current
IAR
4.1
-2.9
A
Repetitive Avalanche Energy
EAR
0.20
0.20
mJ
Peak Diode Recovery dv/dt
dv/dt
5.0
-5.0
V/ ns
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
°C





Description

Fifth Generation HEXFETs IRF7317 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 IRF7317 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Line Protection, Backups
BX0023
A20B-1008-0550
Memory Cards, Modules
WT32
VTL5C7
Undefined Category
VI-B63-IU
X27 589
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Optoelectronics
SFH7770
TLP423J
Switches
US32DMRJ
HBGQ22P-11ET
View more