IRF7204

MOSFET P-CH 20V 5.3A 8-SOIC

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IRF7204 Picture
SeekIC No. : 003432765 Detail

IRF7204: MOSFET P-CH 20V 5.3A 8-SOIC

floor Price/Ceiling Price

Part Number:
IRF7204
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Gain : 19.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5.3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 25nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 860pF @ 10V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 5.3A
Gate Charge (Qg) @ Vgs: 25nC @ 10V
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 860pF @ 10V
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V


Features:

* Adavanced Process Technology
* Ultra Low On-Resistance
* P-Channel MOSFET
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching





Pinout

  Connection Diagram




Specifications

Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V -5.3 A
ID @ TC = 70 Continuous Drain Current, VGS @ 10V -4.2
IDM Pulsed Drain Current -21
PD @TC = 25 Power Dissipation 2.5 W
Linear Derating Factor 0.020 mW/
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt -1.7 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150





Description

Fourth Generation HEXFETs IRF7204 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 IRF7204 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.






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