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IRF7106

Features: * Advanced Process Technology* Ultra Low On-Resistance* Dual N and P Channel Mosfet* Surface Mount* Available in Tape & Reel* Dynamic dv/dt Rating* Fast SwitchingPinoutSpecifications Parameter Max. Units N-Channel P-Channel ID @ TC = 25 Continuous Drain Current, V GS...

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SeekIC No. : 004376688 Detail

IRF7106: Features: * Advanced Process Technology* Ultra Low On-Resistance* Dual N and P Channel Mosfet* Surface Mount* Available in Tape & Reel* Dynamic dv/dt Rating* Fast SwitchingPinoutSpecifications ...

IRF7106 Data Sheet

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Part Number:
IRF7106
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* Advanced Process Technology
* Ultra Low On-Resistance
* Dual N and P Channel Mosfet
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching


Pinout

Connection Diagram


Specifications

  Parameter Max. Units
N-Channel P-Channel
ID @ TC = 25 Continuous Drain Current, V GS @ 10V 3.0 -2.5 A
ID @ TC = 70 Continuous Drain Current, V GS @ 10V 2.5 -2.0
IDM Pulsed Drain Current 10 -10
PD @TC = 25 Power Dissipation 2.0 W
  Linear Derating Factor 0.016 W/
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 3.0 -3.0 V/ns
TJ, TSTG Junction and Storage Temperature Range 55 to + 150



Description

Fourth Generation HEXFETs of the IRF7106 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 of the IRF7106 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.




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