IRF7324D1PBF

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : SOIC-8
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 270 mOhms
Continuous Drain Current : - 2.2 A


Features:

· Co-packaged HEXFET® Power MOSFET and Schottky Diode
· Ideal for Mobile Phone Applications
· Generation V Technology
· SO-8 Footprint
· Lead-Free


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	-20	V
VGS	Gate-to-Source Voltage	± 12
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	-2.2	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	-1.8
IDM	Pulsed Drain Current	-22
PD @TA = 25	Power Dissipation	2.0	W
PD @TA = 70	Power Dissipation	1.3
dV/dt	Peak Diode Recovery	-0.74	V/ns
	Linear Derating Factor	16	mW/
TJ   TSTG	Operating Junction and Storage Temperature Range	-55 to + 150

Description

The FETKYt^TM family IRF7324D1PbF of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7324D1PbF has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.

Parameters:

Technical/Catalog Information	IRF7324D1PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.2A
Rds On (Max) @ Id, Vgs	270 mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) @ Vds	260pF @ 15V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	7.8nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7324D1PBF IRF7324D1PBF