Application• Anti-lock Braking Systems (ABS)• Electronic Fuel Injection• Air bagSpecifications Parameter Max. Units VDS Drain-Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -5.2 A ID @ TA = 70°C Continuous Dr...
IRF7314Q: Application• Anti-lock Braking Systems (ABS)• Electronic Fuel Injection• Air bagSpecifications Parameter Max. Units VDS Drain-Source Voltage -20 V ...
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Parameter |
Max. |
Units | |
VDS |
Drain-Source Voltage |
-20 |
V |
ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V |
-5.2 |
A |
ID @ TA = 70°C |
Continuous Drain Current, VGS @ 10V |
-4.3 | |
IDM |
Pulsed Drain Current |
-43 | |
PD @TA = 25°C |
Maximum Power Dissipation |
2.4 |
W |
PD @TA = 70°C |
Maximum Power Dissipation |
1.7 |
W |
Linear Derating Factor |
16 |
mW/°C | |
VGS |
Gate-to-Source Voltage |
± 12 |
V |
EAS |
Single Pulse Avalanche Energy |
610 |
mJ |
IAR |
Avalanche Current |
-5.2 |
A |
EAR |
Repetitive Avalanche Energy |
See Fig.14, 15, 16 |
mJ |
TJ , TSTG |
Junction and Storage Temperature Range |
-55 to + 175 |
°C |
Specifically designed for Automotive applications, these HEXFET ® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's IRF7314Q are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The 175°C rating IRF7314Q for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.