IRF7103Q

MOSFET N-CH 50V 3A 8-SOIC

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SeekIC No. : 003429889 Detail

IRF7103Q: MOSFET N-CH 50V 3A 8-SOIC

floor Price/Ceiling Price

Part Number:
IRF7103Q
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: 2 N-Channel (Dual) FET Feature: Standard
Drain to Source Voltage (Vdss): 50V Gate-Source Cutoff Voltage : - 4.5 V
Current - Continuous Drain (Id) @ 25° C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) @ Vds: 255pF @ 25V Power - Max: 2.4W
Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO    

Description

Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) @ Vgs: 15nC @ 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 3A
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 50V
Supplier Device Package: 8-SO
Series: HEXFET®
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Packaging: Tube
Input Capacitance (Ciss) @ Vds: 255pF @ 25V


Features:

*Advanced Process Technology
* Dual N-Channel MOSFET
* Ultra Low On-Resistance
* 175 Operating Temperature
* Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified





Application

* Anti-lock Braking Systems (ABS)
*Electronic Fuel Injection
*Power Doors, Windows & Seats





Pinout

  Connection Diagram




Specifications

Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 4.5V 3.0 A
ID @ TC = 70 Continuous Drain Current, VGS @ 4.5V 2.5
IDM Pulsed Drain Current 25
PD @TC = 25 Power Dissipation 2.4 W
Linear Derating Factor 16 mW/
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 22 mJ
IAR Avalanche Current See Fig.16c, 16d, 19, 20 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 12 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 175





Description

Specifically designed for Automotive applications IRF7103Q, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package IRF7103Q provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.






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