MOSFET N-CH 50V 3A 8-SOIC
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Series: | HEXFET® | Manufacturer: | International Rectifier |
FET Type: | 2 N-Channel (Dual) | FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 50V | Gate-Source Cutoff Voltage : | - 4.5 V |
Current - Continuous Drain (Id) @ 25° C: | 3A | Rds On (Max) @ Id, Vgs: | 130 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA | Gate Charge (Qg) @ Vgs: | 15nC @ 10V |
Input Capacitance (Ciss) @ Vds: | 255pF @ 25V | Power - Max: | 2.4W |
Mounting Type: | Surface Mount | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 4.5V | 3.0 | A |
ID @ TC = 70 | Continuous Drain Current, VGS @ 4.5V | 2.5 | |
IDM | Pulsed Drain Current | 25 | |
PD @TC = 25 | Power Dissipation | 2.4 | W |
Linear Derating Factor | 16 | mW/ | |
VGS | Gate-to-Source Voltage | ± 20 | V |
EAS | Single Pulse Avalanche Energy | 22 | mJ |
IAR | Avalanche Current | See Fig.16c, 16d, 19, 20 | A |
EAR | Repetitive Avalanche Energy | mJ | |
dv/dt | Peak Diode Recovery dv/dt | 12 | V/ns |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 175 |
Specifically designed for Automotive applications IRF7103Q, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The efficient SO-8 package IRF7103Q provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.