Position: Home  > All Categories> Integrated Circuits (ICs) > IRF7103

IRF7103

MOSFET N-CH 50V 3A 8-SOIC

product image

IRF7103 Picture
See larger image
SeekIC No. : 004376679 Detail

IRF7103: MOSFET N-CH 50V 3A 8-SOIC

IRF7103 Data Sheet

floor Price/Ceiling Price

US $ .42~.42 / Piece | Get Latest Price
Part Number:
IRF7103
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~570
  • Unit Price
  • $.42
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

*Adavanced Process Technology
* Ultra Low On-Resistance
* Dual N-Channel MOSFET
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching




Pinout

Connection Diagram




Specifications

Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 4.5V 3.0 A
ID @ TC = 70 Continuous Drain Current, VGS @ 4.5V 2.3
IDM Pulsed Drain Current 10
PD @TC = 25 Power Dissipation 2.0 W
Linear Derating Factor 0.016 mW/
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150





Description

Fourth Generation HEXFETs of the IRF7103 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The IRF7103 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.






Parameters:

Technical/Catalog InformationIRF7103
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs130 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 290pF @ 25V
Power - Max2W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7103
IRF7103



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Kits
IT243
UVSC-110-4E1
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Crystals and Oscillators
WT325BI0030.000000
2SB49
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
View more