Mounting Style
: SMD/SMT
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Configuration
: Single Quad Drain Triple Source
Package / Case
: SOIC-8
Continuous Drain Current
: 9.5 A
Drain-Source Breakdown Voltage
: - 12 V
Gate-Source Breakdown Voltage
: +/- 12 V
Resistance Drain-Source RDS (on)
: 0.020 Ohms
Features: · Ultra Low On-Resistance
· P-Channel MOSFET
· Surface Mount
· Available in TaPinout
Specifications
| |
Parameter |
Max. |
Unit |
| VDS |
Drain- Source Voltage |
-12 |
V |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ -4.5V |
±9.5 |
A |
| ID @ TA= 70 |
Continuous Drain Current, VGS @ -4.5V |
±6.0 |
A |
| IDM |
Pulsed Drain Current 1 |
±76 |
A |
| PD @TA = 25 |
Power Dissipation |
2.5 |
W |
| PD @TA = 70 |
Power Dissipation |
1.6 |
W |
| |
Linear Derating Factor |
0.02 |
W/ |
| EAS |
Single Pulse Avalanche Energy 4 |
60 |
mJ |
| VGS |
Gate-to-Source Voltage |
±12 |
V |
| TJ,TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
W/ |
1.
Repetitive rating; pulse width limited by max. junction temperature.
4 Starting TJ = 25, L = 1.3mH RG = 25, IAS = 9.5A.DescriptionThese P-Channel MOSFETs IRF7233PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The SO-8 IRF7233PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase,infrared, or wave soldering techniques.
Parameters: | Technical/Catalog Information | IRF7233PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 9.5A |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 9.5A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 6000pF @ 10V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 74nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7233PBF
IRF7233PBF
|
IRF7233PBF Data Sheet
