Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Configuration
: Single Quad Drain Triple Source
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: SOIC-8
Continuous Drain Current
: 7 A
Resistance Drain-Source RDS (on)
: 50 mOhms
Features: · Generation V Technology
·Ultra Low On-Resistance
· N-Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Dynamic dv/dt Rating
·Fast Switching
· Lead-FreeSpecifications
|
|
Parameter |
Max. |
Units |
|
VDS |
Drain- Source Voltage |
30 |
V |
|
ID @ TC = 25 |
Continuous Drain Current VGS @ 10V |
7.3 |
A |
|
ID @ TC = 70 |
Continuous Drain Current VGS @ 10V |
5.8 |
|
IDM |
Pulsed Drain Current |
58
|
|
PD @ TC = 25 |
Power Dissipation |
2.5 |
W |
|
PD @ TC = 70 |
Power Dissipation |
1.5 |
|
|
Linear Derating Factor |
0.02 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
VGSM |
Gate-to-Source Voltage Single Pulse tp<10µs |
30 |
V |
|
EAR |
Repetitive Avalanche Energy |
70 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
TJ ,TSTG |
Junction and Storage Temperature Range |
-55 to 150 |
|
DescriptionFifth Generation HEXFET® power MOSFETs IRF7201PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7201PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Parameters: | Technical/Catalog Information | IRF7201PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 7.3A |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 7.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 550pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 28nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7201PBF
IRF7201PBF
|
IRF7201PBF Data Sheet
