IRF730B

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 5.5 A
Drain-Source Breakdown Voltage : 400 V
Resistance Drain-Source RDS (on) : 2 Ohms


Features:

• 5.5A, 400V, R_DS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	IRF730B	IRFS730B	Units
VDSS	Drain-Source Voltage	400		V
ID	Drain Current - Continuous (TC = 25)               - Continuous (TC = 100)	5.5	5.5 *	A
		3.5	3.5 *	A
IDM	Drain Current - Pulsed	22	22 *	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy	330		mJ
IAR	Avalanche Current	5.5		A
EAR	Repetitive Avalanche Energy	7.3		mJ
dv/dt	Peak Diode Recovery dv/dt	5.5		V/ns
PD	Power Dissipation (TC = 25)       - Derate above 25	73	38	W
		0.58	0.3	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors IRF730B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology IRF730B has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.