Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current: 10A (Max.) @ VDS = 400V` Lower RDS(ON): 1.408 (Typ.)Specifications Symbol Characteristic Value Units VDSS ...
IRF720A: Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current: 10A (Max.) @ VDS = 400V` Lo...
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Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
400 |
V |
ID |
Continuous Drain Current (TC=25) |
3.3 |
A |
Continuous Drain Current (TC=100) |
2.1 | ||
IDM |
Drain Current-Pulsed (1) |
13 |
A |
VGS |
Gate-to-Source Voltage |
±30 |
V |
EAS |
Single Pulsed Avalanche Energy (2) |
249 |
mJ |
IAR |
Avalanche Current (1) |
3.3 |
A |
EAR |
Repetitive Avalanche Energy (1) |
4.9 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (3) |
4.0 |
V/ns |
PD |
Total Power Dissipation (TC=25) Linear Derating Factor |
49 0.39 |
W W/ |
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |