IRF730SPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 5.5 A
Drain-Source Breakdown Voltage : 400 V
Resistance Drain-Source RDS (on) : 1000 mOhms
Package / Case : TO-263AB


Description

The IRF730SPbF is a kind of HEXFET power MOSFET. Third Generation HEXFETs integrates the features of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package for its isolated mounting hole. It also offers greater creepage distance between pins to meet the requirements of most safety specifications.

There are some features IRF730SPbF as follows: (1)dynamic dv/dt rating; (2)repetitive avalanche rated; (3)surface mount; (4)fast switching; (5)ease of paralleling; (6)simple drive requirements; (7)lead-free; (8)available in tape & reel.

The following is about the absolute maximum ratings IRF730SPbF: (1)ID @ TC=25, continuous drain current, VGS @ 10 V: 5.5 A; (2)ID @ TC=100, continuous drain current, VGS @ 10 V: 3.5 A; (3)IDM, pulsed drain current: 22 A; (4)PD @ TC=25, power dissipation: 74 W; (5)VGS, gate-to-source voltage: ±20 V; (6)EAS, single pulse avalanche energy: 290 mJ; (7)IAR, avalanche current: 5.5 A; (8)EAR, repetitive avalanche energy: 7.4 mJ; (9)dv/dt, peak diode recovery dv/dt: 4.0 V/ns; (10)TJ, TSTG, operating junction and storage temperature: -55 to +150; (11)soldering temperature, for 10 seconds: 300 (1.6 mm from case). Then is about the thermal resistance: (1)RJC, junction-to-case: 1.7/W; (2)RJA, junction-to-ambient IRF730SPbF: 62/W typ; (3)RJA, junction-to-ambient (PCB mount): 40/W max.