IRF7324D1

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 2.2A
Input Capacitance (Ciss) @ Vds: 260pF @ 15V
Packaging: Tube
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Series: FETKY™
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
Gate Charge (Qg) @ Vgs: 7.8nC @ 4.5V


Features:

Co-packaged HEXFETÒ Power MOSFET and Schottky Diode
Ideal for Mobile Phone Applications
Generation V Technology
SO-8 Footprint




Specifications






Description

The FETKY family IRF7324D1 of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7324D1 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.