IRF7324PBF

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : SOIC-8
Configuration : Dual
Continuous Drain Current : - 9 A
Resistance Drain-Source RDS (on) : 0.018 Ohms


Features:

Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.1mm)
Available in Tape & Reel
2.5V Rated
Lead-Free


Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	-20	V
ID @ TA = 25°C	Continuous Drain Current, VGS @ -4.5V	-9.0	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ -4.5V	-7.1	A
IDM	Pulsed Drain Current	-71	A
PD @TA = 25°C	Maximum Power Dissipation	20	W
PD @TA = 70°C	Maximum Power Dissipation	1.3	W
	Linear Derating Factor	16	mW/°C
VGS	Gate-to-Source Voltage	± 12	V
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 150	°C

Description

New trench HEXFET^® Power MOSFETs IRF7324PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device IRF7324PbF for use in battery and load management applications.

Parameters:

Technical/Catalog Information	IRF7324PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	18 mOhm @ 9A, 4.5V
Input Capacitance (Ciss) @ Vds	2940pF @ 15V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	63nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7324PBF IRF7324PBF