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IRF7301

MOSFET 2N-CH 20V 5.2A 8-SOIC

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SeekIC No. : 004376701 Detail

IRF7301: MOSFET 2N-CH 20V 5.2A 8-SOIC

IRF7301 Data Sheet

floor Price/Ceiling Price

US $ .61~.61 / Piece | Get Latest Price
Part Number:
IRF7301
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~475
  • Unit Price
  • $.61
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

* Generation V Technology
* Ultra Low On-Resistance
* Dual N-Channel Mosfet
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching




Pinout

Connection Diagram




Specifications

Parameter Max. Units
ID@TA=25 10 Sec. Pulsed Drain Current, VGS @ 4.5V 5.7 A
ID@TA=25 Continuous Drain Current, VGS @ 4.5V 5.2
ID@TA=70 Continuous Drain Current, VGS @ 4.5V 4.1
IDM Pulsed Drain Current 21
PD @TA = 25 Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150





Description

Fifth Generation HEXFETs IRF7301 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 IRF7301 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.






Parameters:

Technical/Catalog InformationIRF7301
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C5.2A
Rds On (Max) @ Id, Vgs50 mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) @ Vds 660pF @ 15V
Power - Max2W
PackagingBulk
Gate Charge (Qg) @ Vgs20nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET Feature*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7301
IRF7301



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