Mounting Style
: SMD/SMT
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Gate-Source Breakdown Voltage
: 12 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Configuration
: Single Quad Drain Triple Source
Package / Case
: SOIC-8
Resistance Drain-Source RDS (on)
: 100 mOhms
Continuous Drain Current
: - 5.3 A
Features: SpecificationsDescription The featrues of IRF7204PbF are Adavanced Process Technology, Ultra Low On Resistance, a P-Channel MOSFET, Surface Mount, a Available in Tape & Reel, Dynamic dv/dt Rating, Fast Switching, Lead-Free.Fourth Generation HEXFETs from International Rectitier utilize advanced processing techniques to achieve the lowest possible on.resistance per silicon area, This benelit, combined with the fast switching speed and ruggedized device design that HE><FET Power MOSFETs are well known far, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 IRF7204PbF has been modilied through a customized leadframe for enhanced thermal characteristics and dual.die ospsoility making it ideal in a variety or power applications With these improvements, multiple devices can be used in an application vvith dramatioally reduced board spacer The package is designed for vapor phase, infra red, or wave saldering techniques. Power dissipation of greater than o,sW is possible in typical PCB mount application.
The parameters of the IRF7204PbF are ,VGS (Gate-to-Source Voltage)=±12V, ID @ TC= 25°C (Continuous Drain Current, VGS @ 10V)=-5.3A, ID @ TC = 70°C (Continuous Drain Current, VGS @ 10V )=-4.2A, IDM (Pulsed Drain Current)=-21A, PD (@Tc = 25°C Power Dissipation)=2.5W, dv/dt( Peak Diode Recovery dv/dt) =-1.7V/ns, TJ (Operating Junction and)= -55 to + 150°C=TSTG, RJC( Junction-to-Case )=0.83°C/W, RJA( Junction-to-Ambient )=50°C/W.
Parameters: | Technical/Catalog Information | IRF7204PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 5.3A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 5.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 860pF @ 10V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7204PBF
IRF7204PBF
|
IRF7204PBF Data Sheet
