Maximum Operating Temperature
:
Packaging
:
Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 30 V
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: SOIC-8
Configuration
: Dual
Continuous Drain Current
: 6.5 A
Resistance Drain-Source RDS (on)
: 46 mOhms
Features: ` Advanced Process Technology
` Ultra Low On-Resistance
` Dual N- Channel MOSFET
` Surface Mount
` Available in Tape & Reel
` 150 Operating Temperature
` Automotive [Q101] Qualified
` Lead-FreeSpecifications
| Parameter |
Symbol |
Limit |
Units |
Drain-Source Voltage
Gate-Source Voltage |
VDS
VGS |
30
±20 |
V
V |
Continuous Drain Current (TA=25 )
(Tc=70 )
Pulsed Drain Current (2)
Drain-Source Diode Forward Current
Maximum Power Dissipation (TA=25 )
(Tc=70 ) |
ID
IDM
IS
PD |
6.5
5.2
30
2.5
2.0
1.3 |
A
A
A
W |
Single Avalanche Current
Single Avalanche Energy
Repetitive Avalanche Energy |
IAR
EAS
EAR |
4.0
82
0.20 |
A
mJ
mJ |
| Peak Diode Recovery dv/dt |
dv/dt |
5.8 |
V/ns |
Operating Junction and Storage
Temperature Range |
TJ,Tstg |
-55 ~ 150 |
|
DescriptionSpecifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these utomotive qualified HEXFET Power MOSFET's are a 150 junction operating temperature IRF7313QPbF, fast switching speed and mproved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable evice for use in Automotive applications and a wide variety of other applications.
The efficient SO-8 package IRF7313QPbF provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
Parameters: | Technical/Catalog Information | IRF7313QPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 6.5A |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 5.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 650pF @ 25V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 33nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7313QPBF
IRF7313QPBF
|
IRF7313QPBF Data Sheet
