Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 6.2A
Packaging: Tube
Gate Charge (Qg) @ Vgs: 80nC @ 10V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 41 mOhm @ 6.2A, 10V
Input Capacitance (Ciss) @ Vds: 3220pF @ 25V
Features: *Trench Technology
* Ultra Low On-Resistance
* P-Channel MOSFET
* Available in Tape & ReelPinout
Specifications
|
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
-40 |
V |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ -10V |
-6.2 |
A |
| ID @ TC = 70 |
Continuous Drain Current, VGS @ -10V |
-4.9 |
| IDM |
Pulsed Drain Current |
-25 |
| PD @TC = 25 |
Power Dissipation |
2.5 |
W |
| PD @TC = 70 |
Power Dissipation |
1.6 |
|
Linear Derating Factor |
20 |
mW/ |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionNew trench HEXFET® Power MOSFETs IRF7241 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
IRF7241 Data Sheet
