Specifications Parameter N-Channel Max.P-Channel Units ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 4.5V 5.7 -4.7 A ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.2 -4.3 A ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 4.1 -3.4 A IDM Pulsed Drain...
IRF7307: Specifications Parameter N-Channel Max.P-Channel Units ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 4.5V 5.7 -4.7 A ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.2...
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Parameter | N-Channel | Max.P-Channel | Units | |
ID @ TA = 25°C | 10 Sec. Pulse Drain Current, VGS @ 4.5V | 5.7 | -4.7 | A |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 4.5V | 5.2 | -4.3 | A |
ID @ TA = 70°C | Continuous Drain Current, VGS @ 4.5V | 4.1 | -3.4 | A |
IDM | Pulsed Drain Current | 21 | -17 | A |
PD @TA = 25°C | Maximum Power Dissipation | 2.0 | W | |
Linear Derating Factor | 0.016 | mW/°C | ||
VGS | Gate-to-Source Voltage | ± 12 | V | |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | -5.0 | |
TJ , TSTG | Junction and Storage Temperature Range | -55 to + 175 | °C |
Fifth Generation HEXFETs IRF7307 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 IRF7307 has been modified through a customized leadframe for enhanced thermal characteristics and\ multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.