IRF7103QPBF

Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Configuration : Dual
Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 200 mOhms


Features:

` Advanced Process Technology
` Dual N-Channel MOSFET
` Ultra Low On-Resistance
` 175Operating Temperature
` Repetitive Avalanche Allowed up to Tjmax
` Automotive [Q101] Qualified
` Lead-Free


Application

·  Anti-lock Braking Systems (ABS)
·  Electronic Fuel Injection
·  Power Doors, Windows & Seats


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current VGS @ 10V	3	A
ID @ TC =100	Continuous Drain Current VGS @ 10V	2.5
IDM	Pulsed Drain Current	25
PD @ TC = 25	Max. Power Dissipation	2.4	W
	Linear Derating actor	16	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	22	mJ
IAR	Avalanche Current	See Fig.16c, 16d, 19, 20	A
EAR	Repetitive Avalanche Energy		mJ
dV/dt	Peak Diode Recovery dv/dt	12	V/ns
TJ	Operating Junction	-55 to 170
TSTG	Storage Temperature Range

Description

Specifically designed for Automotive applications IRF7103QPbF, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package IRF7103QPbF provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Parameters:

Technical/Catalog Information	IRF7103QPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	130 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	255pF @ 25 V
Power - Max	2.4W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7103QPBF IRF7103QPBF