About SeekIC | Services | Payment | Advertisements service | Contact Us| Justway | Links
© 2008-2012 SeekIC.com Corp.All Rights Reserved.
Suppliers
DataSheet
Response in 12 hours
Index B : BFG540/X,BFG540,BF901R,
BFG540/X
Mfg:PHILIPS Pack:SOT143 D/C:06+ Vendor:Other Category:Other
NPN silicon planar epitaxial transistors BFG540/X, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satelli...BFG540
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
NPN silicon planar epitaxial transistors BFG540, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite...BFG520X
Vendor:Other Category:Other
The BFG520X is a NPN 9 GHz wideband transistor.NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range,such as analog and digital cellular telephones, cordless telephones(C...BFG520W/X
Mfg:PHI D/C:2004 Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG520W/X in a 4-pin dual-emitter SOT343N plastic package.BFG520W
Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG520W in a 4-pin dual-emitter SOT343N plastic package.BFG520/XR
Mfg:PHILIPS Vendor:Other Category:Other
NPN silicon planar epitaxial transistors BFG520/XR, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detecto...BFG520/X
Vendor:Other Category:Other
NPN silicon planar epitaxial transistors BFG520/X, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detector...BFG520
D/C:07+ Vendor:Other Category:Other
NPN silicon planar epitaxial transistors BFG520, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors,...BFG505WXR
Vendor:Other Category:Other
NPN silicon planar epitaxial transistors BFG505WXR in 4-pin dual-emitter SOT343N and SOT343R plastic packages.BFG505WX
Mfg:philips D/C:06+ Vendor:Other Category:Other
NPN silicon planar epitaxial transistors BFG505WX in 4-pin dual-emitter SOT343N and SOT343R plastic packages.BFG505W
Mfg:Philips D/C:06+ Vendor:Other Category:Other
NPN silicon planar epitaxial transistors BFG505W in 4-pin dual-emitter SOT343N and SOT343R plastic packages.BFG505
Vendor:Other Category:Other
The BFG505 is designed as NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. Its applications is RF front end applications in the GHz range, such as analog and digital cellular telep...BFG480W
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
NPN double polysilicon wideband transistor BFG480W with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.BFG425W
Vendor:Other Category:Other
The BFG425W is designed as one kind of NPN 25 GHz wideband transistor which produced by the Philips Semiconductors with some features such as:(1)high power gain;(2)low noise figure;(3)high transition frequency;(4)gold me...BFG424F
Vendor:Other Category:Other
The BFG424F is a type of NPN 25 GHP wideband transistor. They package is NPN double polysilicon wideband transi stor with buried layer for low voltage applications. Features of the BFG424F are:(1) very high power gain; ...BFG410W
Mfg:Philips D/C:06+ Vendor:Other Category:Other
NPN double polysilicon wideband transistor BFG410W with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.BFG403W
Mfg:PHILIPS Pack:SOT143 D/C:05+/06+ Vendor:Other Category:Other
NPN double polysilicon wideband transistor BFG403W with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.BFG35
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
NPN planar epitaxial transistor BFG35 mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.BFG310XP
Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG310XP in a 4-pin dual-emitter SOT343R plastic package.BFG310W
Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG310W in a 4-pin dual-emitter SOT343R plastic package.BFG31
Mfg:SOT223 Pack:7850 D/C:PH Vendor:Other Category:Other
PNP planar epitaxial transistor BFG31 mounted in a plastic SOT223 envelope.BFG31 is intended for wideband amplifier applications.NPN complement is the BFG97.BFG25X
Mfg:PHILIPS Pack:SOT-143 D/C:07+(ROHS) Vendor:Other Category:Other
NPN silicon wideband transistor BFG25X in a four-lead dual emitter SOT143B plastic package (cross emitter).BFG25AWX
Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG25AWX in a 4-pin dual-emitter SOT343N plastic package.BFG25AW/X
Mfg:PHILIPS Pack:06+ D/C:SOT343 Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG25AW/X in a 4-pin dual-emitter SOT343N plastic package.BFG25AW
Mfg:Philips D/C:06+ Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG25AW in a 4-pin dual-emitter SOT343N plastic package.BFG25A/X
Mfg:PHILIPS Pack:SOT143 D/C:00+ Vendor:Other Category:Other
NPN silicon wideband transistor BFG25A/X in a four-lead dual emitter SOT143B plastic package (cross emitter).BFG25A
Mfg:PHILIPS Pack:12000 D/C:07+ Vendor:Other Category:Other
NPN silicon wideband transistor BFG25A in a four-lead dual emitter SOT143B plastic package (cross emitter).BFG21W
Vendor:Other Category:Other
NPN double polysilicon bipolar power transistor BFG21W with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package.BFG198
Mfg:PHI Pack:SOT-223 D/C:07+ Vendor:Other Category:Other
NPN planar epitaxial transistor BFG198 in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.BFG197/XR
Vendor:Other Category:Other
The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-...BFG197/X
Mfg:PHILIPS Pack:SOT143 D/C:2005+ Vendor:Other Category:Other
The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-...BFG197
Mfg:PHILIPS Pack:06+ D/C:SOT143 Vendor:Other Category:Other
The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-...BFG196
Mfg:INFINEON Pack:SOT223 D/C:2008+ Vendor:Other Category:Other
BFG193
Mfg:infineon Pack:TO223 D/C:03+ Vendor:Other Category:Other
BFG17A
Mfg:PHILIPS D/C:06+ Vendor:Other Category:Other
NPN wideband transistor BFG17A in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding.BFG17A is intended for use in wideband aerial amplifiers using SMD technology.BFG16A
Mfg:PH Pack:SOT-223 D/C:04+ Vendor:Other Category:Other
NPN transistor BFG16A mounted in a plastic SOT223 envelope.BFG16A is primarily intended for use in wideband amplifiers, aerial amplifiers and vertical amplifiers in high speed oscilloscopes.BFG135
Mfg:PHI Pack:SOT-223 D/C:07+ Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG135 in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output vo...BFG11X
Mfg:PHILIPS Pack:06+ D/C:- Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG11X encapsulated in a plastic 4-pin dual-emitter SOT343 package.BFG11WX
Mfg:Philips D/C:06+ Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG11WX encapsulated in a plastic 4-pin dual-emitter SOT343 package.BFG11W
Mfg:Philips D/C:06+ Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG11W encapsulated in a plastic 4-pin dual-emitter SOT343 package.BFG11/X
Mfg:PHI Pack:SOT D/C:1996 Vendor:Other Category:Other
NPN silicon planar epitaxial transistors BFG11/X encapsulated in a plastic, 4-pin dual-emitter SOT143 package.BFG11
Vendor:Other Category:Other
The BFG11 is designed as NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. Its typical applications is common emitter class-AB operation in hand-held radio equipment a...BFG10X
Mfg:PHILIPS Pack:06+ D/C:- Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG10X encapsulated in a plastic, 4-pin dual-emitter SOT343 package.BFG10W
Mfg:PHI Pack:SOT-343 Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG10W encapsulated in a plastic, 4-pin dual-emitter SOT343 package.BFG10/X
Mfg:Philips D/C:06+ Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG10/X encapsulated in plastic, 4-pin dual-emitter SOT143 package.BFG10
Mfg:PHI Pack:SOT-143 D/C:05+ Vendor:Other Category:Other
NPN silicon planar epitaxial transistor BFG10 encapsulated in plastic, 4-pin dual-emitter SOT143 package.BFG 235
Vendor:Other Category:Other
BFG 19S
Vendor:Other Category:Other
BFG 194
Vendor:Other Category:Other
BFG 135A
Vendor:Other Category:Other
BFE520
Mfg:PHILIPS Pack:06+ D/C:SOT353 Vendor:Other Category:Other
Emitter coupled dual NPN silicon RF transistor BFE520 in a surface mount 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplif...BFE505
Mfg:PHILIPS Pack:06+ D/C:SOT353 Vendor:Other Category:Other
Emitter coupled dual NPN silicon RF transistor BFE505 in a surface mount, 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential ampli...BFC61
Vendor:Other Category:Other
BFC60
Vendor:Other Category:Other
BFC520
Mfg:PHILIPS Pack:SOT353 Vendor:Other Category:Other
Cascode amplifier BFC520 with two discrete dies in a surface mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for low power RF communications equipment, such as pagers and cordless phones and has...BFC51
Vendor:Other Category:Other
BFC505
Mfg:PHILIPS Pack:SOT353 Vendor:Other Category:Other
Cascode amplifier BFC505 with two discrete dies in a surface mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for low power RF communications equipment, such as pagers and has a very low feedback...BFC50
Vendor:Other Category:Other
BFC43
Vendor:Other Category:Other
BFC40
Vendor:Other Category:Other
BFC33
Vendor:Other Category:Other
BFC30
Vendor:Other Category:Other
BFC2 809 05...
Mfg:Vishay D/C:08+ Vendor:Other Category:Other
Film Dielectric Trimmers BFC2 809 05...BFC13
Vendor:Other Category:Other
BFC11
Vendor:Other Category:Other
BFB1432S
Vendor:Other Category:Other
The BFB1432S is designed as one kind of very small, low cost, filter device that is intended for use with A-D and D-A composite NTSC video converters using a sample rate of 4 x sub-carrier frequency. And this device is s...BFB1432F
Vendor:Other Category:Other
The BFB1432F is designed as one kind of very small, low cost, filter device that is intended for use with A-D and D-A composite NTSC video converters using a sample rate of 4 x sub-carrier frequency. And this device is s...BF999
Mfg:infineon Pack:O3 D/C:23 Vendor:Other Category:Other
BF998WR
Mfg:PHILIPS Pack:SOT343 D/C:06+ Vendor:Other Category:Other
Depletion type field-effect transistor BF998WR in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-t...BF998RW
Mfg:VISHAY Pack:06+ Vendor:Other Category:Other
BF998R
Vendor:Other Category:Other
The BF998R is one member of the silicon N_Channel MOSFET tetrode family,it is designed with two points of features:(1)short-channel transistor with high S/C quality factor;(2)for low-noise,gain-controlled input stage up ...BF998...
Vendor:Other Category:Other
BF998
Vendor:Other Category:Other
The BF998 is one member of the silicon N_Channel MOSFET tetrode family,it is designed with two points of features:(1)short-channel transistor with high S/C quality factor;(2)for low-noise,gain-controlled input stage up t...BF996S
Mfg:S+M Pack:Sot-143 D/C:09+ Vendor:Other Category:Other
BF995
Mfg:VISHAY Pack:SOT-143 D/C:2002 Vendor:Other Category:Other
BF994S
Mfg:SIEMENS Pack:SOT143 D/C:04+ Vendor:Other Category:Other
BF992
Mfg:AMD Pack:SOT143 D/C:05+ Vendor:Other Category:Other
Depletion type field-effect transistor BF992 in a plastic micro-miniature SOT143B package with source and substrate interconnected.The transistor is protected against excessive input voltage surges by integrated back-to-...BF991
Mfg:NXP Pack:08+ D/C:2700 Vendor:Other Category:Other
Depletion type field-effect transistor BF991 in a plastic SOT143 microminiature package with interconnected source and substrate.BF990A
Mfg:PHILIPS Pack:SOT-23 D/C:02+ Vendor:Other Category:Other
Depletion type field-effect transistor BF990A in a plastic SOT143 microminiature package with interconnected source and substrate.BF989
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Depletion type field-effect transistor BF989 in a plastic SOT143 microminiature package with interconnected source and substrate.BF988
Mfg:SIE Vendor:Other Category:Other
BF979
Mfg:SIE Vendor:Other Category:Other
BF970
Mfg:SIE Vendor:Other Category:Other
BF966S
Mfg:SIE Vendor:Other Category:Other
BF964S
Mfg:SIE Vendor:Other Category:Other
BF961
Mfg:SIE Vendor:Other Category:Other
BF959/D
Vendor:Other Category:Other
BF909WR
Vendor:Other Category:Other
Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconBF909WR nected and an internal bias circuit to ensur...BF909R
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
Enhancement type field-effect transistor BF909R in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit...BF909
Mfg:PHILIPS Pack:SOT143 D/C:0409+ Vendor:Other Category:Other
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ens...BF908WR
Mfg:PHILIPS Pack:06+ D/C:SOT343R Vendor:Other Category:Other
Depletion type field effect transistor BF908WR in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.BF908R
Vendor:Other Category:Other
Depletion type field-effect transistor BF908R in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates an...BF908
Mfg:MOTOROLA D/C:08+ Vendor:Other Category:Other
Depletion type field-effect transistor BF908 in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and...BF904WR
Mfg:PHI Pack:10000 Vendor:Other Category:Other
Enhancement type field-effect transistor BF904WR in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensur...BF904R
Vendor:Other Category:Other
Enhancement type field-effect transistor BF904R in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source The BF904R is one member of the N-channel dual gate MO...BF904AWR
Mfg:PHILIPS Vendor:Other Category:Other
Enhancement type field-effect transistors. The transistors BF904AWR consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during...BF904AR
Mfg:Philips Pack:Sot-143 D/C:09+ Vendor:Other Category:Other
Enhancement type field-effect transistors. The transistors BF904AR consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during ...BF904A
Mfg:PHILIPS Pack:SOT-143 D/C:07+(ROHS) Vendor:Other Category:Other
Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.The ...BF904
Mfg:MOTOROLA D/C:08+ Vendor:Other Category:Other
Enhancement type field-effect transistor BF904 in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with sourceBF901R
Mfg:PHILIPS D/C:04+ Vendor:Other Category:Other
Enhancement type field-effect transistors BF901R in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners...