BFG505

The BFG505 is designed as NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. Its applications is RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV).

BFG505 has four features. The first one is it would have high power gain. The second one is it would have low noise figure. The third one is it would have high transition frequency. The fourth one is gold metallization ensures excellent reliability. That are all the main features.

Some limiting values of BFG505 have been concluded into several points as follow. The first one is about its collector-base voltage open emitter which would be max 20V. The second one is about its collector-emitter voltage which would be max 15V. The third one is about its emitter-base voltage open collector which would be max 2.5V. The fourth one is about its collector current (DC) which would be max 18mA. The fifth one is about its total power dissipation which would be max 150mW. The sixth one is about its storage temperature range which would be from -65 to 150°C. The seventh one is about its junction temperature which would be max 175°C. The eighth one is about its thermal resistance from junction to soldering point which would be 290K/W.

Also some characteristics of BFG505 about it. The first one is about its collector cut-off current which would be max 50nA. The second one is about its DC current gain which would be min 60 and typ 120 and max 250. The third one is about its emitter capacitance which would be typ 0.4pF. The fourth one is about its collector capacitance which would be typ 0.3pF. The fifth one is about its feedback capacitance which would be typ 0.2pF. And so on. For more information please contact us.