Features: · Specially designed for use at 5 V supply voltage· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz· Superior cross-modulation performance during AGC.ApplicationVHF and UHF applications with 3 to 7...
BF904WR: Features: · Specially designed for use at 5 V supply voltage· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 G...
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· Specially designed for use at 5 V supply voltage
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.
VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.
SYMBOL |
PARAMETER |
CONDITIONS | MIN. |
TYP. |
MAX. |
UNIT |
VDS | drain-source voltage | - | - | 7 | V | |
ID | drain current | - | - | 30 | mA | |
Ptot | total power dissipation | - | - | 280 | mW | |
Tj | junction temperature | - | - | 150 | °C | |
|Yfs| | transfer admittance | 22 | 28 | 30 | mS | |
Cig1-s | input capacitance at gate 1 | - | 2.35 | 2.6 | pF | |
Crs | feedback capacitance | f = 1 MHz | - | 25 | 35 | fF |
F | noise figure at 800 MHz | f = 800 MHz | - | 1.7 | - | dB |
Enhancement type field-effect transistor BF904WR in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.