BF904WR

Features: · Specially designed for use at 5 V supply voltage· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz· Superior cross-modulation performance during AGC.ApplicationVHF and UHF applications with 3 to 7...

product image

BF904WR Picture
SeekIC No. : 004299579 Detail

BF904WR: Features: · Specially designed for use at 5 V supply voltage· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 G...

floor Price/Ceiling Price

Part Number:
BF904WR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/11

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Specially designed for use at 5 V supply voltage
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.




Application

VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.




Pinout

  Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS MIN.
TYP.
MAX.
UNIT
VDS drain-source voltage   - - 7 V
ID drain current   - - 30 mA
Ptot total power dissipation   - - 280 mW
Tj junction temperature   - - 150 °C
|Yfs| transfer admittance   22 28 30 mS
Cig1-s input capacitance at gate 1   - 2.35 2.6 pF
Crs feedback capacitance f = 1 MHz - 25 35 fF
F noise figure at 800 MHz f = 800 MHz - 1.7 - dB



Description

Enhancement type field-effect transistor BF904WR in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Computers, Office - Components, Accessories
Potentiometers, Variable Resistors
Connectors, Interconnects
LED Products
Audio Products
Sensors, Transducers
View more