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BF901R

Features: ` Intended for low voltage operation` Short channel transistor with high ratio|Yfs|:Cis` Low noise gain-controlled amplifier to 1 GHz` BF901R has reverse pinning.PinoutSpecifications SYMBOL PARAMETER TYP. MAX. UNIT VDS drain-source voltage - 12 V ID drain cu...

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SeekIC No. : 004299573 Detail

BF901R: Features: ` Intended for low voltage operation` Short channel transistor with high ratio|Yfs|:Cis` Low noise gain-controlled amplifier to 1 GHz` BF901R has reverse pinning.PinoutSpecifications ...

BF901R Data Sheet

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Part Number:
BF901R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

` Intended for low voltage operation
` Short channel transistor with high ratio |Yfs|:Cis
` Low noise gain-controlled amplifier to 1 GHz
` BF901R has reverse pinning.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
TYP.
MAX.
UNIT
VDS drain-source voltage - 12 V
ID drain current - 30 mA
Ptot total power dissipation - 200 mW
Tj junction temperature - 150 °C
|Yfs| transfer admittance 28 35 mS
Cig1-s input capacitance at gate 1 2.35 2.75 pF
Crs feedback capacitance 25 - fF
F noise figure at 800 MHz 1.7 150 dB



Description

Enhancement type field-effect transistors BF901R in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low voltage operation. These MOS-FET tetrodes are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.




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