Features: · Specially designed for use at 5 V supply voltage· Short channel transistor with high transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz· Superior cross-modulation performance during AGC.Application· VHF and UHF applications with 3 to 7 V sup...
BF904: Features: · Specially designed for use at 5 V supply voltage· Short channel transistor with high transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz· Supe...
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SYMBOL | PARAMETER | CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS | drain-source voltage |
- |
7 |
V | |
ID | drain current |
- |
30 |
mA | |
IG1 | gate 1 current |
- |
±10 |
mA | |
IG2 | gate 2 current |
- |
±10 |
mA | |
Ptot | total power dissipation | see Fig.3 | |||
BF904 | Tamb 50 °C; note 1 |
- |
200 |
mW | |
BF904R | Tamb 40 °C; note 1 |
- |
200 |
mW | |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | operating junction temperature |
- |
150 |
°C |
Enhancement type field-effect transistor BF904 in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source