BFG540

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 20 V VCES collector-e...

product image

BFG540 Picture
SeekIC No. : 004299672 Detail

BFG540: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. TYP. ...

floor Price/Ceiling Price

Part Number:
BFG540
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/4

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.



Pinout

  Connection Diagram  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO collector-base voltage open emitter
-
-
20
V
VCES collector-emitter voltage RBE = 0
-
-
15
V
IC DC collector current  
-
-
120
mA
Ptot total power dissipation Ts 60 °C; note 1
-
-
400
mW
hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 °C
100
120
250
Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz
-
0.5
-
pF
fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
-
9
-
GHz
GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
-
18
-
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
-
11
-
dB
|s21|2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
15
16
-
dB
F noise figure Gs = Gopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
-
1.3
1.8
dB
Gs = Gopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
-
1.9
2.4
dB
Gs = Gopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
-
2.1
-
dB



Description

NPN silicon planar epitaxial transistors BFG540, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems.

The transistors BFG540 are mounted in plastic SOT143B and SOT143R packages.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Integrated Circuits (ICs)
Soldering, Desoldering, Rework Products
Isolators
RF and RFID
Power Supplies - External/Internal (Off-Board)
Fans, Thermal Management
View more