Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 20 V VCES collector-e...
BFG540: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. TYP. ...
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SYMBOL | PARAMETER | CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
VCBO | collector-base voltage | open emitter |
- |
- |
20 |
V |
VCES | collector-emitter voltage | RBE = 0 |
- |
- |
15 |
V |
IC | DC collector current |
- |
- |
120 |
mA | |
Ptot | total power dissipation | Ts 60 °C; note 1 |
- |
- |
400 |
mW |
hFE | DC current gain | IC = 40 mA; VCE = 8 V; Tj = 25 °C |
100 |
120 |
250 |
|
Cre | feedback capacitance | IC = 0; VCE = 8 V; f = 1 MHz |
- |
0.5 |
- |
pF |
fT | transition frequency | IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C |
- |
9 |
- |
GHz |
GUM | maximum unilateral power gain | IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
- |
18 |
- |
dB |
IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C |
- |
11 |
- |
dB | ||
|s21|2 | insertion power gain | IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
15 |
16 |
- |
dB |
F | noise figure | Gs = Gopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
- |
1.3 |
1.8 |
dB |
Gs = Gopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
- |
1.9 |
2.4 |
dB | ||
Gs = Gopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C |
- |
2.1 |
- |
dB |
NPN silicon planar epitaxial transistors BFG540, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems.
The transistors BFG540 are mounted in plastic SOT143B and SOT143R packages.