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BFG11X

Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability· Linear and non-linear operation.Application· Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.· Dri...

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SeekIC No. : 004299636 Detail

BFG11X: Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability· Linear and non-linear operation.Applicati...

BFG11X Data Sheet

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Part Number:
BFG11X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability
· Linear and non-linear operation.


Application

· Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.
· Driver for DCS 1800.




Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
8
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current (DC)
-
500
mA
Ptot total power dissipation
up to Ts = 60 °C; note 1
-
760
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C


Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector tab.




Description

NPN silicon planar epitaxial transistor BFG11X encapsulated in a plastic 4-pin dual-emitter SOT343 package.


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