Position: Home  > All Categories> Integrated Circuits (ICs) > BFG11X

BFG11X

Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability· Linear and non-linear operation.Application· Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.· Dri...

product image

BFG11X Picture
See larger image
SeekIC No. : 004299636 Detail

BFG11X: Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability· Linear and non-linear operation.Applicati...

BFG11X Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BFG11X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· High power gain
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability
· Linear and non-linear operation.


Application

· Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.
· Driver for DCS 1800.




Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
8
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current (DC)
-
500
mA
Ptot total power dissipation
up to Ts = 60 °C; note 1
-
760
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C


Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector tab.




Description

NPN silicon planar epitaxial transistor BFG11X encapsulated in a plastic 4-pin dual-emitter SOT343 package.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Crystals and Oscillators
WT325BI0030.000000
2SB49
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Circuit Protection
A50QS75-4Y
F-17*77
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more