Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability.Application· Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.PinoutSpecifications SYMBOL PARAMETER CONDITIO...
BFG10/X: Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability.Application· Common emitter class-AB opera...
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Transistors RF Bipolar Small Signal Single NPN 8V 250mA 400mW 25
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
VCEO | collector-emitter voltage |
open base |
- |
8 |
V |
VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
IC | collector current (DC) |
- |
250 |
mA | |
IC(AV) | average collector current |
- |
250 |
mA | |
Ptot | total power dissipation |
up to Ts = 60 °C; see Fig.2; note 1 |
- |
400 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector pin.
NPN silicon planar epitaxial transistor BFG10/X encapsulated in plastic, 4-pin dual-emitter SOT143 package.