BFG10/X Selling Leads, Price trend, BFG10/X DataSheet download, circuit diagram from SeekIC.com

Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability.Application· Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.PinoutSpecifications SYMBOL PARAMETER CONDITIO...

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SeekIC No. : 004299629 Detail

BFG10/X: Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability.Application· Common emitter class-AB opera...

BFG10/X Data Sheet

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Part Number:: BFG10/X
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/25

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What is this?

BFG10 evaluate
Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operati...
BFG10,215 evaluate
US $.27 - .29 / Piece

Transistors RF Bipolar Small Signal Single NPN 8V 250mA 400mW 25
BFG10/X,215 evaluate
US $.27 - .29 / Piece

Transistors RF Bipolar Small Signal Single NPN 8V 250mA 400mW 25

Product Details

Description

Features:

· High power gain
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability.

Application

· Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	20	V
V_CEO	collector-emitter voltage	open base	-	8	V
V_EBO	emitter-base voltage	open collector	-	2.5	V
I_C	collector current (DC)		-	250	mA
I_C(AV)		average collector current	-	250	mA
P_tot	total power dissipation	up to T_s = 60 °C; see Fig.2; note 1	-	400	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	175	°C

Note
1. T_s is the temperature at the soldering point of the collector pin.

Description

NPN silicon planar epitaxial transistor BFG10/X encapsulated in plastic, 4-pin dual-emitter SOT143 package.

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BFG10/X

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