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BFG31

Features: · High output voltage capability· High gain bandwidth product· Good thermal stability· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -20 V VC...

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SeekIC No. : 004299653 Detail

BFG31: Features: · High output voltage capability· High gain bandwidth product· Good thermal stability· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDI...

BFG31 Data Sheet

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Part Number:
BFG31
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· High output voltage capability
· High gain bandwidth product
· Good thermal stability
· Gold metallization ensures excellent reliability.




Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
-20
V
VCEO collector-emitter voltage
open base
-
-15
V
VEBO emitter-base voltage
open collector
-
-3
V
IC DC collector current
-
-100
mA
Ptot total power dissipation
up to Ts = 135 °C; note 1
-
1
W
Tstg storage temperature
-65
150
°C
Tj junction temperature
-
175
°C


Note
1. Ts is the temperature at the soldering point of the collector tab.




Description

PNP planar epitaxial transistor BFG31 mounted in a plastic SOT223 envelope.

BFG31 is intended for wideband amplifier applications.

NPN complement is the BFG97.




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