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BFG310W

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliabilityApplicationIntended for Radio Frequency (RF) front end applications in the GHz range, such as: ` analog and digital cellular telephones ` cordless telephones (Cordless Telephon...

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SeekIC No. : 004299654 Detail

BFG310W: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliabilityApplicationIntended for Radio Frequency (RF) front end applications in the G...

BFG310W Data Sheet

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Part Number:
BFG310W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability


Application

 Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
   ` analog and digital cellular telephones
   ` cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
   ` radar detectors
   ` pagers
   ` Satellite Antenna TeleVision (SATV) tuners




Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
15
V
VCEO collector-emitter voltage
open base
-
6
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current (DC)
-
10
mA
Ptot total power dissipation
Tsp   145 °C         [1]
-
60
mW
Tstg storage temperature
-65
+175
°C
Tj junction temperature
-
175
°C


[1] Tsp is the temperature at the soldering point of the collector pin.




Description

NPN silicon planar epitaxial transistor BFG310W in a 4-pin dual-emitter SOT343R plastic package.


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