BFG310W Selling Leads, Price trend, BFG310W DataSheet download, circuit diagram from SeekIC.com

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliabilityApplicationIntended for Radio Frequency (RF) front end applications in the GHz range, such as: ` analog and digital cellular telephones ` cordless telephones (Cordless Telephon...

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SeekIC No. : 004299654 Detail

BFG310W: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliabilityApplicationIntended for Radio Frequency (RF) front end applications in the G...

BFG310W Data Sheet

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Part Number:: BFG310W
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/25

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Recent History
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Product Details

Description

Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability

Application

Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
   ` analog and digital cellular telephones
   ` cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
   ` radar detectors
   ` pagers
   ` Satellite Antenna TeleVision (SATV) tuners

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	15	V
V_CEO	collector-emitter voltage	open base	-	6	V
V_EBO	emitter-base voltage	open collector	-	2	V
I_C	collector current (DC)		-	10	mA
P_tot	total power dissipation	T_sp 145 °C [1]	-	60	mW
T_stg	storage temperature		-65	+175	°C
T_j	junction temperature		-	175	°C

[1] Tsp is the temperature at the soldering point of the collector pin.

Description

NPN silicon planar epitaxial transistor BFG310W in a 4-pin dual-emitter SOT343R plastic package.

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BFG310W

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