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BFG480W

Features: · High power gain· High efficiency· Low noise figure· High transition frequency· Emitter is thermal lead· Low feedback capacitance· Linear and non-linear operation.Application· RF front end with high linearity system demands (CDMA)· Common emitter class AB driver.PinoutSpecifications ...

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SeekIC No. : 004299661 Detail

BFG480W: Features: · High power gain· High efficiency· Low noise figure· High transition frequency· Emitter is thermal lead· Low feedback capacitance· Linear and non-linear operation.Application· RF front en...

BFG480W Data Sheet

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Part Number:
BFG480W
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· High efficiency
· Low noise figure
· High transition frequency
· Emitter is thermal lead
· Low feedback capacitance
· Linear and non-linear operation.


Application

· RF front end with high linearity system demands (CDMA)
· Common emitter class AB driver.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
TYP.
MAX.
UNIT
VCBO collector-base voltage open base
-
4.5
V
IC DC collector current  
80
250
mA
Ptot total power dissipation Ts 60 °C
-
360
mW
fT transition frequency IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C
21
-
GHz
Gmax maximum gain IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C
16
-
dB
F noise figure IC = 8 mA; VCE = 2 V; f = 2 MHz; GS = Gopt
1.8
-
dB
GP power gain Pulsed; class-AB; < 1 : 2; tp = 5 ms;
VCE = 3.6 V; f = 2 GHz; PL = 100 mW
13.5
-
dB
C collector efficiency Pulsed; class-AB; d < 1 : 2; tp = 5 ms;
VCE = 3.6 V; f = 2 GHz; PL = 100 mW
45
-
%



Description

NPN double polysilicon wideband transistor BFG480W with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.




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