BFG403W Selling Leads, Price trend, BFG403W DataSheet download, circuit diagram from SeekIC.com

Features: · Low current· Very high power gain· Low noise figure· High transition frequency· Very low feedback capacitance.Application· Pager front ends· RF front end· Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)· Radar detectors.PinoutSp...

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SeekIC No. : 004299657 Detail

BFG403W: Features: · Low current· Very high power gain· Low noise figure· High transition frequency· Very low feedback capacitance.Application· Pager front ends· RF front end· Wideband applications, e.g. ana...

BFG403W Data Sheet

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Part Number:: BFG403W
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/21

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Product Details

Description

Features:

· Low current
· Very high power gain
· Low noise figure
· High transition frequency
· Very low feedback capacitance.

Application

· Pager front ends
· RF front end
· Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
· Radar detectors.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	10	V
V_CEO	collector-emitter voltage	open base	-	4.5	V
V_EBO	emitter-base voltage	open collector	-	1	V
I_C	collector current (DC)		-	3.6	mA
P_tot	total power dissipation	T_s 140 °C; note 1; see Fig.2	-	16	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C

Description

NPN double polysilicon wideband transistor BFG403W with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

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BFG403W

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