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BFG11/X

Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability.Application· Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.PinoutSpecifications SYMBOL PARAMETER CONDITIO...

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SeekIC No. : 004299633 Detail

BFG11/X: Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability.Application· Common emitter class-AB opera...

BFG11/X Data Sheet

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Part Number:
BFG11/X
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability.


Application

· Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
8
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current (DC)
-
500
mA

 IC(AV)

  average collector current      500  
Ptot total power dissipation
up to Ts = 60 °C; note 1; see Fig.2
-
400
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C


Note to the "Limiting values" and "Thermal characteristics"
1. Ts is the temperature at the soldering point of the collector pin.




Description

NPN silicon planar epitaxial transistors BFG11/X encapsulated in a plastic, 4-pin dual-emitter SOT143 package.


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