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BFG135

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 25 V VCEO collector-emitter voltage open base - 15 V VEBO emitter-base voltage open collector - 2 V IC collector current ...

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BFG135: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 25 V VCEO collector-emitter voltage open base -...

BFG135 Data Sheet

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Part Number:
BFG135
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
25
V
VCEO collector-emitter voltage
open base
-
15
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current (DC)
-
150
mA
Ptot total power dissipation
up to Ts = 145 °C (note 1)
-
1
mW
Tstg storage temperature
-65
150
°C
Tj junction temperature
-
175
°C


Note
1. Ts is the temperature at the soldering point of the collector tab.




Description

NPN silicon planar epitaxial transistor BFG135 in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

The distribution of the active areas across the surface of the device gives an excellent temperature profile.




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