BFG135 Selling Leads, Price trend, BFG135 DataSheet download, circuit diagram from SeekIC.com

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 25 V VCEO collector-emitter voltage open base - 15 V VEBO emitter-base voltage open collector - 2 V IC collector current ...

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SeekIC No. : 004299637 Detail

BFG135: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 25 V VCEO collector-emitter voltage open base -...

BFG135 Data Sheet

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Part Number:: BFG135
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/12/25

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Product Details

Description

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	25	V
V_CEO	collector-emitter voltage	open base	-	15	V
V_EBO	emitter-base voltage	open collector	-	2	V
I_C	collector current (DC)		-	150	mA
P_tot	total power dissipation	up to T_s = 145 °C (note 1)	-	1	mW
T_stg	storage temperature		-65	150	°C
T_j	junction temperature		-	175	°C

Note
1. T_s is the temperature at the soldering point of the collector tab.

Description

NPN silicon planar epitaxial transistor BFG135 in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

The distribution of the active areas across the surface of the device gives an excellent temperature profile.

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BFG135

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