BFG25X

Features: · Low current consumption (100 mA to 1 mA)· Low noise figure· Gold metallization ensures excellent reliability.Application· RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz.PinoutDescriptionNPN silicon wideband transistor BFG25X in a...

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BFG25X Picture
SeekIC No. : 004299652 Detail

BFG25X: Features: · Low current consumption (100 mA to 1 mA)· Low noise figure· Gold metallization ensures excellent reliability.Application· RF low power amplifiers, such as pocket telephones, paging syste...

floor Price/Ceiling Price

Part Number:
BFG25X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· Low current consumption (100 mA to 1 mA)
· Low noise figure
· Gold metallization ensures excellent reliability.



Application

· RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz.


Pinout

  Connection Diagram  Connection Diagram


Description

NPN silicon wideband transistor BFG25X in a four-lead dual emitter SOT143B plastic package (cross emitter).


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