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BFG21W

Features: · High power gain· High efficiency· 1.9 GHz operating area· Linear and non-linear operation.Application· Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc.· Driver for DCS1800, 1900.PinoutSpecifications SYMBOL PARAMETER CONDITION...

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SeekIC No. : 004299646 Detail

BFG21W: Features: · High power gain· High efficiency· 1.9 GHz operating area· Linear and non-linear operation.Application· Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such a...

BFG21W Data Sheet

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Part Number:
BFG21W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· High efficiency
· 1.9 GHz operating area
· Linear and non-linear operation.


Application

· Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc.
· Driver for DCS1800, 1900.




Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
15
V
VCEO collector-emitter voltage
open base
-
4.5
V
VEBO emitter-base voltage
open collector
-
1
V
IC collector current (DC)
-
500
mA
Ptot total power dissipation
Ts 60 °C; note 1
-
600
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
150
°C


Note
1. Ts is the temperature at the soldering point of the emitter pins.




Description

NPN double polysilicon bipolar power transistor BFG21W with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package.




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