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BFG25A/X

Features: ` Low current consumption (100 mA to 1 A)` Low noise figure` Gold metallization ensures excellent reliability.Application· RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz.PinoutSpecifications SYMBOL PARAMETER CONDITIONS ...

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BFG25A/X: Features: ` Low current consumption (100 mA to 1 A)` Low noise figure` Gold metallization ensures excellent reliability.Application· RF low power amplifiers, such as pocket telephones, paging system...

BFG25A/X Data Sheet

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Part Number:
BFG25A/X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

` Low current consumption (100 mA to 1 A)
` Low noise figure
` Gold metallization ensures excellent reliability.


Application

· RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz.




Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
8
V
VCEO collector-emitter voltage
open base
-
5
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current (DC)
-
6.5
mA
Ptot total power dissipation
Ts 165 °C; note 1
-
32
mW
Tstg storage temperature
-65
150
°C
Tj junction temperature
-
175
°C


Note
1. Ts is the temperature at the soldering point of the collector pin.




Description

NPN silicon wideband transistor BFG25A/X in a four-lead dual emitter SOT143B plastic package (cross emitter).




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