BF998R

The BF998R is one member of the silicon N_Channel MOSFET tetrode family,it is designed with two points of features:(1)short-channel transistor with high S/C quality factor;(2)for low-noise,gain-controlled input stage up to 1 GHz.

The absolute maximum ratings of the BF998R can be summarized as:(1)drain-source voltage:12 V;(2)continuous drain current:30 mA;(3)gate 1/ gate 2-source current:10 mA;(4)total power dissipation(TS76 °C,BF998,BF998R):200 mA;(5)total power dissipation(TS94 °C,BF998W):200 mA;(6)storage temperature:-55 to 150°C;(7)channel temperature:150°C.And the electrical characteristics of it can be summarized as:(1)drain-source breakdown voltage(ID=10 A,VG1S=-4 V,VG2S=-4 V):12 V;(2)gate 1 source breakdown voltage(±IG2S=10 mA,VG2S=VDS=0):8 to 12 V;(3)gate2 source breakdown voltage(±IG2S=10 mA,VG2S=VDS=0):8 to 12 V;(4)gate 1 source leakage current(±VG1S=5 V,VG2S=VDS=0):50 nA;(5)gate 2 source leakage current(±VG2S=5 V,VG2S=VDS=0):50 nA;(6)drain current(VDS=8 V,VG1S=0,VG2S=4 V):5 to 15 mA;(7)gate 1 source pinch-off voltage(VDS=8 V,VG2S=4 V,ID=20 A):0.8 V;(8)gate 2 source pinch-off voltage(VDS=8 V,VG1S=0,ID=20 A):0.8 V.

If you want to know more information about the BF998R,please download the datasheet in www.seekdatasheet.com .