BF909WR

VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconBF909WR nected and an internal bias circuit to ensure good cross-modulation performance during AGC.

The BF909WR is designed as one kind of the N-channel dual-gate MOS-FET which produced by the Philips Semiconductors with some features such as:(1)short channel transistor with high forward transfer admittance to input capacitance ratio;(2)low noise gain controlled amplifier up to 1 GHz;(3)superior cross-modulation performance during AGC;(4)specially designed for use at 5 V supply voltage.And it can be used in VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.This kind of transistor consists of an amplifier MOS-FET with source and
substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

The absolute maximum ratings of the BF909WR can be summarized as:(1)drain-source voltage:7 V;(2)drain current:40 mA;(3)total power dissipation:280 mW;(4)operating junction temperature:150 °C;(5)forward transfer admittance:43 mS;(6)input capacitance at gate 1:3.6 pF;(7)reverse transfer capacitance(f=1 MHz):30 fF;(8)noise figure(f=800 MHz):2 dB;(9)storage temperature range:-65 to +150 °C;(10)operating junction temperature:+150 °C;(11)thermal resistance from junction to ambient(device mounted on a printed-circuit board):350 K/W;(12)thermal resistance from junction to soldering point(Ts is the temperature at the soldering point of the source lead):210 K/W.If you want to know more information such as the dynamic characteristics about the BF909WR,please download the datasheet in www.seekdatasheet.com .