Features: · Small size· High power gain at low bias current and voltage· Temperature matched· Balanced configuration· hFE matched· Continues to operate at VCE < 1 V.Application· Single balanced mixers· Balanced amplifiers· Balanced oscillators.PinoutSpecifications SYMBOL PARAMETER COND...
BFE520: Features: · Small size· High power gain at low bias current and voltage· Temperature matched· Balanced configuration· hFE matched· Continues to operate at VCE < 1 V.Application· Single balanced m...
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SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Any single transistor | |||||
VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
VCEO | collector-emitter voltage |
open base |
- |
8 |
V |
VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
IC | DC collector current |
- |
70 |
mA | |
Ptot | total power dissipation |
up to Ts = 118 °C; note 1 |
- |
1 |
W |
Tstg | storage temperature |
-65 |
+175 |
°C | |
Tj | junction temperature |
- |
175 |
°C |
Emitter coupled dual NPN silicon RF transistor BFE520 in a surface mount 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners.