BFE520 Selling Leads, Price trend, BFE520 DataSheet download, circuit diagram from SeekIC.com

Features: · Small size· High power gain at low bias current and voltage· Temperature matched· Balanced configuration· hFE matched· Continues to operate at VCE < 1 V.Application· Single balanced mixers· Balanced amplifiers· Balanced oscillators.PinoutSpecifications SYMBOL PARAMETER COND...

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SeekIC No. : 004299623 Detail

BFE520: Features: · Small size· High power gain at low bias current and voltage· Temperature matched· Balanced configuration· hFE matched· Continues to operate at VCE < 1 V.Application· Single balanced m...

BFE520 Data Sheet

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Part Number:: BFE520
Supply Ability:: 5000

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Upload time: 2024/12/25

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Features: · Small size· High power gain at low bias current and voltage· Temperature matched· Bala...

Product Details

Description

Features:

· Small size
· High power gain at low bias current and voltage
· Temperature matched
· Balanced configuration
· hFE matched
· Continues to operate at V_CE < 1 V.

Application

· Single balanced mixers
· Balanced amplifiers
· Balanced oscillators.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Any single transistor
V_CBO	collector-base voltage	open emitter	-	20	V
V_CEO	collector-emitter voltage	open base	-	8	V
V_EBO	emitter-base voltage	open collector	-	2.5	V
I_C	DC collector current		-	70	mA
P_tot	total power dissipation	up to T_s = 118 °C; note 1	-	1	W
T_stg	storage temperature		-65	+175	°C
T_j	junction temperature		-	175	°C

Description

Emitter coupled dual NPN silicon RF transistor BFE520 in a surface mount 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners.

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BFE520

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