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BFE505

Features: · Small size· High power gain at low bias current and voltage· Temperature matched· Balanced configuration· hFE matched· Continues to operate at VCE < 1 V.Application· Single balanced mixers· Balanced amplifiers· Balanced oscillators.PinoutSpecifications SYMBOL PARAMETER COND...

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SeekIC No. : 004299622 Detail

BFE505: Features: · Small size· High power gain at low bias current and voltage· Temperature matched· Balanced configuration· hFE matched· Continues to operate at VCE < 1 V.Application· Single balanced m...

BFE505 Data Sheet

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Part Number:
BFE505
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· Small size
· High power gain at low bias current and voltage
· Temperature matched
· Balanced configuration
· hFE matched
· Continues to operate at VCE < 1 V.




Application

· Single balanced mixers
· Balanced amplifiers
· Balanced oscillators.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
8
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC DC collector current
-
18
mA
Ptot total power dissipation
up to Ts = 118 °C; note 1
-
500
mW
Tstg storage temperature
-65
+175
°C
Tj junction temperature
-
175
°C



Description

Emitter coupled dual NPN silicon RF transistor BFE505 in a surface mount, 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners.




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