Features: · High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.SpecificationsIn accordance with the Absolute Maximum System (IEC 134).
| SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO |
collector-base voltage |
open emitter |
- |
20 |
v |
| VCEO |
collector-emitter voltage |
open base |
- |
15 |
v |
| VEBO |
emitter-base voltage |
open collector |
- |
2.5 |
v |
| IC |
DC collector current |
|
- |
70 |
mA |
| Ptot |
total power dissipation |
up to Ts = 88 °C; note 1 |
- |
300 |
mW |
| Tstg |
storage temperature |
|
-65 |
150 |
°C |
| Tj |
junction temperature |
|
- |
175 |
°C |
DescriptionNPN silicon planar epitaxial transistors BFG520/X, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.
The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes.
The BFG520/X is designed as one kind of NPN 9 GHz wideband transistor which produced by the Philips Semiconductors with some features such as:(1)high power gain;(2)low noise figure;(3)high transition frequency;(4)gold metallization ensures excellent reliability.NPN silicon planar epitaxial transistors,intended for applications in the RF frontend in the GHz range,such as analog and digital cellular telephones,cordless telephones (CT1, CT2, DECT, etc.),radar detectors,pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143 and SOT143R envelopes.
The quick reference data of the BFG520/X can be summarized as:(1)collector-base voltage:20 V;(2)collector-emitter voltage:15 V;(3)DC collector current:70 mA;(4)total power dissipation:300 mW;(5)DC current gain:60 to 250;(6)feedback capacitance(IC=0;VCB=6 V;f=1 MHz):0.3 pF;(7)transition frequency(IC=20 mA; VCE=6 V;f=1 GHz;):9 GHz;(8)maximum unilateral power gain(IC=20 mA;VCE=6 V;f=900 MHz;):19 dB;(9)insertion power gain:18 dB;(10)storage temperature:-65 to 150 °C;(11)junction temperature:175 °C.If you want to know more information such as the electrical AC characteristics about the BFG520/X,please download the datasheet in www.seekdatasheet.com .
BFG520/X Data Sheet
